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| Bulletin I27503 08/97 MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case Outstanding number of power encapsulated components Excellent power volume ratio 4000 VRMS isolating voltage UL E78996 approved 55 A 90 A 110 A Description A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. Major Ratings and Characteristics Parameters IO @ TC IFSM @ 50Hz @ 60Hz It 2 53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units 51MT.KB 91MT.KB 111MT.KB 55 85 390 410 770 700 7700 90 85 950 1000 4525 4130 45250 800 to 1600 - 40 to 125 - 40 to 125 110 85 1130 1180 6380 5830 63800 A C A A A2s A2 s A2s V C C @ 50Hz @ 60Hz I2t VRRM range TSTG range TJ range www.irf.com 1 53-93-113MT..KB Series Bulletin I27503 08/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code VRRM, maximum repetitive peak reverse voltage V 800 1000 1200 1400 1600 800 1000 1200 1400 1600 VRSM, maximum non-repetitive peak reverse voltage V 900 1100 1300 1500 1700 900 1100 1300 1500 1700 VDRM, max. repetitive IRRM/IDRM max. peak off-state voltage gate open circuit V 800 1000 1200 1400 1600 800 1000 1200 1400 1600 20 10 @ TJ = 125C mA 80 100 53/52/51MT..KB 120 140 160 80 93/92/91MT..KB 113/112/111MT..KB 100 120 140 160 Forward Conduction Parameter IO ITSM Maximum DC output current @ Case temperature Maximum peak, one-cycle forward, non-repetitive on state surge current I2t Maximum I2t for fusing 53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB 55 85 390 410 330 345 770 700 540 500 90 85 950 1000 800 840 4525 4130 3200 2920 45250 1.09 1.27 4.10 3.59 1.65 150 200 mA 400 110 85 1130 1180 950 1000 6380 5830 4510 4120 63800 1.04 1.27 3.93 3.37 1.57 V A/s m A 2s V A2 s A C A t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% V RRM reapplied No voltage reapplied 100% V RRM reapplied Initial TJ = TJ max. 120 Rect conduction angle I2 t Maximum I2t for fusing voltage 7700 1.17 1.45 12.40 11.04 2.68 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), @ TJ max. (I > x I T(AV)), @ T J max. (16.7% x x IT(AV) < I < x IT(AV)), @ TJ max. (I > x I T(AV)), @ T J max. Ipk = 150A, TJ = 25C tp = 400s single junction TJ = 25oC, from 0.67 VDRM , ITM = x I T(AV), Ig = 500mA, tr < 0.5 s, tp > 6 s TJ = 25o C, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM di/dt IH IL Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Max. non-repetitive rate of rise of turned on current Max. holding current Max. latching current 2 www.irf.com 53-93-113MT..KB Series Bulletin I27503 08/97 Blocking Parameter VINS RMS isolation voltage 53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB 4000 500 V V/s TJ = 25 oC all terminal shorted f = 50Hz, t = 1s TJ = TJ max., linear to 0.67 VDRM, gate open circuit dv/dt Max. critical rate of rise of off-state voltage (*) (*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90. Triggering Parameter PGM Max. peak gate power 53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB 10 2.5 2.5 10 A V W T J = TJ max. PG(AV) Max. average gate power IGM -VGT VGT Max. peak gate current Max. peak negative gate voltage Max. required DC gate voltage to trigger IGT Max. required DC gate current to trigger VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger 4.0 2.5 1.7 270 150 80 0.25 V T J = - 40C T J = 25C T J = 125C T J = - 40C Anode supply = 6V, resistive load mA V T J = 25C T J = 125C Anode supply = 6V, resistive load @ TJ = TJ max., rated VDRM applied 6 mA Thermal and Mechanical Specifications Parameter TJ Tstg RthJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case 0.18 1.07 0.19 1.17 RthCS Max. thermal resistance, case to heatsink T Mounting torque 10% wt to heatsink to terminal 4 to 6 3 to 4 225 g Nm 0.14 0.86 0.15 0.91 0.03 0.12 0.70 0.12 0.74 K/W K/W DC operation per module DC operation per junction 120 Rect condunction angle per module 120 Rect condunction angle per junction Per module Mounting surface smooth, flat an greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB -40 to 125 C -40 to 125 C Approximate weight www.irf.com 3 53-93-113MT..KB Series Bulletin I27503 08/97 R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices 53/52/51MT.KB 93/92/91MT.KB 113/112/111MT.KB Sinusoidal conduction @ TJ max. 180o 0.072 0.033 0.027 120o 0.085 0.039 0.033 90o 0.108 0.051 0.042 60o 0.152 0.069 0.057 30o 0.233 0.099 0.081 180o 0.055 0.027 0.023 Rectangular conduction @ TJ max. 120o 0.091 0.044 0.037 90o 0.117 0.055 0.046 60o 0.157 0.071 0.059 30o 0.236 0.100 0.082 Units K/W Ordering Information Table Device Code 11 1 3 2 MT 3 160 4 K B 5 S90 6 1 - Current rating code: 5 = 55 A (Avg) 9 = 90 A (Avg) 11 = 110 A (Avg) 2 - Circuit configuration code: 3 = Full-controlled bridge 2 = Positive half-controlled bridge 1 = Negative half-controlled bridge 3 4 5 6 - Essential part number Voltage code: Code x 10 = VRRM (See Voltage Ratings Table) Generation II Critical dv/dt: None = 500V/s (Standard value) S90 = 1000V/s (Special selection) full-controlled bridge (53, 93, 113MT..KB) positive half-controlled bridge (52, 92, 112MT..KB) negative half-controlled bridge (51, 91, 111MT..KB) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com 53-93-113MT..KB Series Bulletin I27503 08/97 Outline Table (with optional barriers) All dimensions in millimeters (inches) Outline Table (without optional barriers) All dimensions in millimeters (inches) www.irf.com 5 53-93-113MT..KB Series Bulletin I27503 08/97 Maximum Allowable Case Temperature (C) 130 53MT..KB Series 120 Instantaneous On-state Current (A) T = 25C J T = 125C J 1000 110 120 (Rect) 100 100 10 90 53MT..KB Series Per Junction 1 0 1 2 3 4 5 6 7 80 0 10 20 30 40 50 60 Total Output Current (A) Instantaneous On-state Voltage (V) Fig. 1 - Current Ratings Characteristic 220 Fig. 2 - Forward Voltage Drop Characteristics K/W .05 =0 A R thS /W 2K 0.1 /W 2K 0. W K/ 200 Maximum Total Power Loss (W) 180 160 140 120 100 80 60 40 20 0 0 53MT..KB Series T = 125C J 4 0. 3 0. 0. 5 K/ W /W K 120 (Rect) 0. 7K /W 1K /W 1.5 K/W R elta -D 0 5 10 15 20 25 30 35 40 45 50 55 Total Output Current (A) 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 3 - Total Power Loss Characteristics 350 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125C 400 300 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 350 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125C No Voltage Reapplied Rated VRRM Reapplied 300 250 250 200 53MT..KB Series Per Junction 150 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) 200 53MT..KB Series Per Junction 150 0.01 0.1 Pulse Train Duration (s) 1 Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 6 www.irf.com 53-93-113MT..KB Series Bulletin I27503 08/97 Maximum Allowable Case Temperature (C) 130 93MT..KB Series 120 1000 Instantaneous On-state Current (A) 100 110 120 (Rect) 100 T = 25C J 10 T = 125C J 90 93MT..KB Series Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 4 80 0 20 40 60 80 100 Total Output Current (A) Instantaneous On-state Voltage (V) Fig. 6 - Current Ratings Characteristic 300 Fig. 7 - Forward Voltage Drop Characteristics R thS Maximum Total Power Loss (W) 250 200 93MT..KB Series T = 125C J 12 0. 2 0. K/ W 0. 4K /W 0. 5 K/ W 0.7 K/W 1K /W 0. 3 W K/ A W K/ K/W .05 =0 120 (Rect) 150 100 50 0 0 10 20 30 40 50 60 70 80 0 90 aR elt -D 1.5 K /W 25 50 75 100 125 Total Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 8 - Total Power Loss Characteristics 850 Peak Half Sine Wave On-state Current (A) 800 750 700 650 600 550 500 450 400 1 10 100 Num Of Equal Amplitude Half Cycle Current Pulses (N) ber Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 800 700 600 500 400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRM Reapplied 93MT..KB Series Per Junction 93MT..KB Series Per Junction 0.1 Pulse Train Duration (s) 1 300 0.01 Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current www.irf.com 7 53-93-113MT..KB Series Bulletin I27503 08/97 Maximum Allowable Case Temperature (C) 130 113MT..KB Series 120 1000 Instantaneous On-state Current (A) 110 120 (Rect) 100 T = 25C J 10 T = 125C J 100 90 113MT..KB Series Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 4 80 0 20 40 60 80 100 120 Total Output Current (A) Instantaneous On-state Voltage (V) Fig. 11 - Current Ratings Characteristic 350 Maximum Total Power Loss (W ) 300 250 200 150 100 50 0 0 0 10 20 30 40 50 60 70 80 90 100110 Total Output Current (A) 25 120 (Rect) 113MT..KB Series T = 125C J Fig. 12 - Forward Voltage Drop Characteristics R thS 12 0. W K/ 0. 3 K/ W 0.4 K/ W 0.5 K/W 0.7 K/W 1K /W 2 0. /W K A K/W .05 =0 aR elt -D 1.5 K /W 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 13 - Total Power Loss Characteristics 1000 Peak Half Sine Wave On-state Current (A) 900 800 700 600 500 400 1 10 100 Num Of Equal Amplitude Half Cycle Current Pulses (N) ber Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125C 1200 1100 1000 900 800 700 600 500 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125C J No Voltage Reapplied Rated V RRMReapplied 113MT..KB Series Per Junction 113MT..KB Series Per Junction 0.1 Pulse Train Duration (s) 1 400 0.01 Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current 8 www.irf.com 53-93-113MT..KB Series Bulletin I27503 08/97 10 Transient Thermal Impedance ZthJC (K/W) Steady State Value RthJC = 1.07 K/W 53MT..KB Series 93MT..KB Series RthJC = 0.86 K/W RthJC = 0.70 K/W (DC Operation) 113MT..KB Series 1 0.1 0.01 Per Junction 0.001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 16 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 s, tp >= 6 s b) Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms tr = 1 s, tp >= 6 s 10 (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) TJ = -40 C TJ = 25 C TJ = 125 C 1 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 53/ 93/ 113MT..KB Series Frequency Limited by PG(AV) 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics www.irf.com 9 |
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